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Other articles related with "amorphous silicon"：
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48104 |
You-Peng Xiao(肖友鹏), Xiu-Qin Wei(魏秀琴), Lang Zhou(周浪) |
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Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell |
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Chin. Phys. B
2017 Vol.26 (4): 48104-048104
[Abstract]
(616)
[HTML 1 KB]
[PDF 367 KB]
(350)
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118801 |
Yanjiao Shen(沈艳娇), Jianhui Chen(陈剑辉), Jing Yang(杨静), Bingbing Chen(陈兵兵), Jingwei Chen(陈静伟), Feng Li(李峰), Xiuhong Dai(代秀红), Haixu Liu(刘海旭), Ying Xu(许颖), Yaohua Mai(麦耀华) |
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Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD |
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Chin. Phys. B
2016 Vol.25 (11): 118801-118801
[Abstract]
(750)
[HTML 1 KB]
[PDF 1393 KB]
(394)
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106801 |
O. Semenova, A. Kozelskaya, Li Zhi-Yong, Yu Yu-De |
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Mechanical strains in pecvd SiNx:H films for nanophotonic application |
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Chin. Phys. B
2015 Vol.24 (10): 106801-106801
[Abstract]
(584)
[HTML 1 KB]
[PDF 621 KB]
(333)
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98801 |
Wang Shuo (王烁), Zhang Xiao-Dan (张晓丹), Xiong Shao-Zhen (熊绍珍), Zhao Ying (赵颖) |
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Structural properties of a-SiOx：H films studied by an improved infrared-transmission analysis method |
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Chin. Phys. B
2014 Vol.23 (9): 98801-098801
[Abstract]
(539)
[HTML 1 KB]
[PDF 537 KB]
(596)
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57804 |
Yu Wei (于威), Wang Xin-Zhan (王新占), Dai Wan-Lei (戴万雷), Lu Wan-Bing (路万兵), Liu Yu-Mei (刘玉梅), Fu Guang-Sheng (傅广生) |
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Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes |
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Chin. Phys. B
2013 Vol.22 (5): 57804-057804
[Abstract]
(737)
[HTML 1 KB]
[PDF 354 KB]
(726)
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107802 |
Fu Guang-Sheng (傅广生), Wang Xin-Zhan (王新占), Lu Wan-Bing (路万兵), Dai Wan-Lei (戴万雷), Li Xing-Kuo (李兴阔), Yu Wei (于威) |
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Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon |
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Chin. Phys. B
2012 Vol.21 (10): 107802-107802
[Abstract]
(1152)
[HTML 1 KB]
[PDF 320 KB]
(2022)
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87309 |
Ni Jian(倪牮), Zhang Jian-Jun(张建军), Cao Yu(曹宇), Wang Xian-Bao(王先宝), Li Chao(李超), Chen Xin-Liang(陈新亮), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖) |
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Open-circuit voltage analysis of p–i–n type amorphous silicon solar cells deposited at low temperature |
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Chin. Phys. B
2011 Vol.20 (8): 87309-087309
[Abstract]
(1553)
[HTML 1 KB]
[PDF 281 KB]
(1643)
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1125 |
Liu Guo-Han(刘国汉), Ding Yi(丁毅), Zhang Wen-Li(张文理), Chen Guang-Hua(陈光华), He De-Yan(贺德衍), and Deng Jin-Xiang(邓金祥) |
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Light induced microstructure transformation in a-Si:H films |
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Chin. Phys. B
2007 Vol.16 (4): 1125-1128
[Abstract]
(1301)
[HTML 1 KB]
[PDF 144 KB]
(547)
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813 |
Ding Yi (丁毅), Liu Guo-Han (刘国汉), Chen Guang-Hua (陈光华), He De-Yan (贺德衍), Zhu Xiu-Hong (朱秀红), Zhang Wen-Li (张文理), He Bin (何斌), Zhang Xiao-Kang (张晓康), Tian Ling (田凌), Ma Zhan-Jie (马占杰) |
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Semi-quantitative study on the Staebler--Wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system |
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Chin. Phys. B
2006 Vol.15 (4): 813-817
[Abstract]
(1838)
[HTML 1 KB]
[PDF 268 KB]
(511)
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834 |
Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Yin Sheng-Yi (阴生毅), Rong Yan-Dong (荣延栋), Zhang Wen-Li (张文理), Hu Yue-Hui (胡跃辉) |
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Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire |
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Chin. Phys. B
2005 Vol.14 (4): 834-837
[Abstract]
(692)
[HTML 1 KB]
[PDF 240 KB]
(417)
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2348 |
Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Zhang Wen-Li (张文理), Ding Yi (丁毅), Ma Zhan-Jie (马占洁), Hu Yue-Hui (胡跃辉), He Bin (何斌), Rong Yan-Dong (荣延栋) |
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Study on stability of hydrogenated amorphous silicon films |
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Chin. Phys. B
2005 Vol.14 (11): 2348-2351
[Abstract]
(986)
[HTML 1 KB]
[PDF 231 KB]
(471)
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2342 |
Lei Qing-Song (雷青松), Wu Zhi-Meng (吴志猛), Geng Xin-Hua (耿新华), Zhao Ying (赵颖), Xi Jian-Ping (奚建平) |
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Influence of the deposition parameters on the transition region of hydrogenated silicon films growth |
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Chin. Phys. B
2005 Vol.14 (11): 2342-2347
[Abstract]
(745)
[HTML 1 KB]
[PDF 291 KB]
(462)
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